product description:

MOSFET field effect transistor, that is, the metal layer (M) gate across the oxide layer (O) using the effect of the electric field to control the semiconductor (S) field effect transistor, is a monopole voltage control device. This type of device can be divided into P-channel and N-channel according to the conductive channel, which can be divided into depletion type according to the gate voltage amplitude (there is a conductive channel between the drain source when the gate voltage is zero) and Enhanced (for N (P) channel devices, there is a conductive channel when the gate voltage is greater than (less than) zero). MOSFET field effect transistor is not only self-shut-off capability, but also has a small driving power, high switching speed, no secondary breakdown, safe working area wide and so on, its easy to drive and switching frequency up to 500kHz.

Product Usage:

Used in DC / DC conversion, switching power supply, portable electronic equipment, aerospace and automotive and other electrical and electronic equipment

 

Product parameters:

ID (A): 0.22 to 30; PD (W): 0.63 to 150; VDSS: 90 to 400