product description:

The point-contact diode is formed by pressing a metal needle on a single wafer of germanium or silicon material and then by a current method. Therefore, the PN junction of the electrostatic capacity is small, suitable for high-frequency circuit. However, compared with the surface junction type, point contact type diode positive and reverse characteristics are poor, therefore, can not be used for high current and rectifier. Because the structure is simple, so cheap. For small-signal detection, rectification, modulation, mixing and limiting and other general purposes, it is a wider range of applications.

Product Usage:

For switching circuits, amplifying circuits and so on.

 

Product parameters:

IC (A): 0.02 to 60 Ptot (W): 0.1 to 35